Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IRFU5505PBF
BESCHREIBUNG
MOSFET P-CH 55V 18A IPAK
DETAILIERTE BESCHREIBUNG
P-Channel 55 V 18A (Tc) 57W (Tc) Through Hole IPAK (TO-251AA)
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000

Technische Daten

Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
110mOhm @ 9.6A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
32 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
650 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
57W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
IPAK (TO-251AA)
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number
IRFU5505

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

*IRFU5505PBF
IFEINFIRFU5505PBF
SP001557786
2156-IRFU5505PBF

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFU5505PBF

Dokumente und Medien

Datasheets
1(IRFR5505PbF, IRFU5505PbF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Featured Product
1(Data Processing Systems)
PCN Design/Specification
1(Mult Dev Label Chgs 8/Sep/2021)
PCN Other
1(Mult Dev Lot Code Standardization 11/Nov/2022)
HTML Datasheet
1(IRFR5505PbF, IRFU5505PbF)

Menge Preis

-

Stellvertreter

Teil Nr. : IRFU5305PBF
Hersteller. : Infineon Technologies
Verfügbare Menge. : 0
Einzelpreis. : $1.06000
Ersatztyp. : Similar