English
Spain
Rusia
Italy
ChinaBUH51G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BUH51G
BESCHREIBUNG
TRANS NPN 500V 3A TO126
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 500 V 3 A 23MHz 50 W Through Hole TO-126
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
BUH51G Models
STANDARDPAKET
500
Lagerbestände
Technische Daten
Mfr
onsemi
Series
SWITCHMODE™
Package
Bulk
Product Status
Obsolete
Transistor Type
NPN
Current - Collector (Ic) (Max)
3 A
Voltage - Collector Emitter Breakdown (Max)
500 V
Vce Saturation (Max) @ Ib, Ic
500mV @ 200mA, 1A
Current - Collector Cutoff (Max)
100µA
DC Current Gain (hFE) (Min) @ Ic, Vce
8 @ 1A, 1V
Power - Max
50 W
Frequency - Transition
23MHz
Operating Temperature
-65°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Supplier Device Package
TO-126
Base Product Number
BUH51
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
ONSONSBUH51G
2156-BUH51G-ON
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi BUH51G
Dokumente und Medien
Datasheets
1(BUH51)
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Devices 14/Apr/2010)
HTML Datasheet
1(BUH51)
EDA Models
1(BUH51G Models)
Menge Preis
-
Stellvertreter
-