Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
SQM120N02-1M3L_GE3
BESCHREIBUNG
MOSFET N-CH 20V 120A TO263
DETAILIERTE BESCHREIBUNG
N-Channel 20 V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D2PAK)
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
18 Weeks
EDACAD-MODELL
STANDARDPAKET
800

Technische Daten

Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.3mOhm @ 40A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
290 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
14500 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
375W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
SQM120

Umweltverträgliche Exportklassifikationen

Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

SQM120N02-1M3L_GE3TR
SQM120N02-1M3L_GE3DKR
SQM120N02-1M3L_GE3CT
SQM120N02-1M3L_GE3-ND

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SQM120N02-1M3L_GE3

Dokumente und Medien

Datasheets
1(SQM120N02-1M3L)
HTML Datasheet
1(SQM120N02-1M3L)

Menge Preis

QUANTITÄT: 5600
Einzelpreis: $1.36125
Verpackung: Tape & Reel (TR)
MinMultiplikator: 800
QUANTITÄT: 2400
Einzelpreis: $1.41886
Verpackung: Tape & Reel (TR)
MinMultiplikator: 800
QUANTITÄT: 1600
Einzelpreis: $1.50685
Verpackung: Tape & Reel (TR)
MinMultiplikator: 800
QUANTITÄT: 800
Einzelpreis: $1.75983
Verpackung: Tape & Reel (TR)
MinMultiplikator: 800

Stellvertreter

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