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ChinaRJK1001DPN-E0#T2
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
RJK1001DPN-E0#T2
BESCHREIBUNG
MOSFET N-CH 100V 80A TO220AB
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 80A (Ta) 200W (Tc) Through Hole TO-220AB
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
78
Lagerbestände
Technische Daten
Mfr
Renesas Electronics Corporation
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
80A (Ta)
Rds On (Max) @ Id, Vgs
5.5mOhm @ 40A, 10V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
147 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
10000 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
200W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-RJK1001DPN-E0#T2-RE
RENRNSRJK1001DPN-E0#T2
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Renesas Electronics Corporation RJK1001DPN-E0#T2
Dokumente und Medien
Datasheets
1(RJK1001DPN-E0#T2)
Menge Preis
QUANTITÄT: 78
Einzelpreis: $3.85
Verpackung: Tube
MinMultiplikator: 78
Verpackung: Tube
MinMultiplikator: 78
Stellvertreter
-