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ChinaFQA12N60
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TEILNUMMER DES HERSTELLERS
FQA12N60
BESCHREIBUNG
MOSFET N-CH 600V 12A TO3P
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 12A (Tc) 240W (Tc) Through Hole TO-3P
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
FQA12N60 Models
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
onsemi
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
700mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
54 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1900 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
240W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3P
Package / Case
TO-3P-3, SC-65-3
Base Product Number
FQA1
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
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Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQA12N60
Dokumente und Medien
Datasheets
1(FQA12N60)
Environmental Information
()
HTML Datasheet
1(FQA12N60)
EDA Models
1(FQA12N60 Models)
Menge Preis
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Stellvertreter
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