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ChinaSTP5N120
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
STP5N120
BESCHREIBUNG
MOSFET N-CH 1200V 4.7A TO220-3
DETAILIERTE BESCHREIBUNG
N-Channel 1200 V 4.7A (Tc) 160W (Tc) Through Hole TO-220
HERSTELLER
STMicroelectronics
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
50
Lagerbestände
Technische Daten
Mfr
STMicroelectronics
Series
SuperMESH™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
4.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.5Ohm @ 2.3A, 10V
Vgs(th) (Max) @ Id
5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
55 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
120 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
160W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
Base Product Number
STP5N
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
STP5N120-ND
497-8811-5
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics STP5N120
Dokumente und Medien
Datasheets
1(STP5N120)
HTML Datasheet
1(STP5N120)
Menge Preis
-
Stellvertreter
Teil Nr. : IXFP6N120P
Hersteller. : IXYS
Verfügbare Menge. : 181
Einzelpreis. : $9.84000
Ersatztyp. : Similar
Verfügbare Menge. : 181
Einzelpreis. : $9.84000
Ersatztyp. : Similar