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ChinaFDD6N25TM
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FDD6N25TM
BESCHREIBUNG
POWER FIELD-EFFECT TRANSISTOR, 4
DETAILIERTE BESCHREIBUNG
N-Channel 250 V 4.4A (Tc) 50W (Tc) Surface Mount TO-252AA
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,086
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
UniFET™
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25°C
4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.1Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
250 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
50W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252AA
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8542.39.0001
Andere Namen
2156-FDD6N25TM
ONSFSCFDD6N25TM
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FDD6N25TM
Dokumente und Medien
Datasheets
1(FDD6N25TM Datasheet)
Menge Preis
QUANTITÄT: 1086
Einzelpreis: $0.28
Verpackung: Bulk
MinMultiplikator: 1086
Verpackung: Bulk
MinMultiplikator: 1086
Stellvertreter
-