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ChinaFDPF55N06
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FDPF55N06
BESCHREIBUNG
POWER FIELD-EFFECT TRANSISTOR, 5
DETAILIERTE BESCHREIBUNG
N-Channel 60 V 55A (Tc) 48W (Tc) Through Hole TO-220F-3
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
344
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
UniFET™
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
22mOhm @ 27.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
37 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
1510 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
48W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220F-3
Package / Case
TO-220-3 Full Pack
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8542.39.0001
Andere Namen
2156-FDPF55N06
FAIFSCFDPF55N06
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FDPF55N06
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 344
Einzelpreis: $0.87
Verpackung: Bulk
MinMultiplikator: 344
Verpackung: Bulk
MinMultiplikator: 344
Stellvertreter
-