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TEILNUMMER DES HERSTELLERS
WNSC2D06650XQ
BESCHREIBUNG
DIODE SIL CARBIDE 650V 6A TO220F
DETAILIERTE BESCHREIBUNG
Diode 650 V 6A Through Hole TO-220F
HERSTELLER
WeEn Semiconductors
STANDARD LEADTIME
20 Weeks
EDACAD-MODELL
STANDARDPAKET
50
Lagerbestände
Technische Daten
Mfr
WeEn Semiconductors
Series
-
Package
Tube
Product Status
Active
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
6A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 6 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
30 µA @ 650 V
Capacitance @ Vr, F
198pF @ 1V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2 Full Pack, Isolated Tab
Supplier Device Package
TO-220F
Operating Temperature - Junction
175°C
Base Product Number
WNSC2
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.10.0080
Andere Namen
1740-WNSC2D06650XQ
934072228127
Kategorie
/Product Index/Discrete Semiconductor Products/Diodes/Rectifiers/Single Diodes/WeEn Semiconductors WNSC2D06650XQ
Dokumente und Medien
Datasheets
1(WNSC2D06650X)
Menge Preis
QUANTITÄT: 3000
Einzelpreis: $0.81941
Verpackung: Tube
MinMultiplikator: 3000
Verpackung: Tube
MinMultiplikator: 3000
Stellvertreter
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