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ChinaPDTD123EQA147
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
PDTD123EQA147
BESCHREIBUNG
TRANS PREBIAS
DETAILIERTE BESCHREIBUNG
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 500 mA 210 MHz 940 mW Surface Mount DFN1010D-3
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
8,219
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
PDTD123EQA
Package
Bulk
Product Status
Active
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
500 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
2.2 kOhms
Resistor - Emitter Base (R2)
2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic
100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
210 MHz
Power - Max
940 mW
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Package / Case
3-XDFN Exposed Pad
Supplier Device Package
DFN1010D-3
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.21.0075
Andere Namen
NEXNXPPDTD123EQA147
2156-PDTD123EQA147
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/NXP USA Inc. PDTD123EQA147
Dokumente und Medien
Datasheets
1(PDTD113, 123, 143, 114EQA)
HTML Datasheet
1(PDTD113, 123, 143, 114EQA)
Menge Preis
-
Stellvertreter
-