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ChinaRF1S9640
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
RF1S9640
BESCHREIBUNG
MOSFET P-CH 200V 11A TO220AB
DETAILIERTE BESCHREIBUNG
P-Channel 200 V 11A (Tc) 125W (Tc) Through Hole TO-220AB
HERSTELLER
Harris Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
231
Lagerbestände
Technische Daten
Mfr
Harris Corporation
Series
-
Package
Bulk
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
11A (Tc)
Rds On (Max) @ Id, Vgs
500mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
90 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1100 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
0000.00.0000
Andere Namen
HARHARRF1S9640
2156-RF1S9640
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Harris Corporation RF1S9640
Dokumente und Medien
Datasheets
1(RF1S9640)
Menge Preis
QUANTITÄT: 231
Einzelpreis: $1.3
Verpackung: Bulk
MinMultiplikator: 231
Verpackung: Bulk
MinMultiplikator: 231
Stellvertreter
-