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ChinaDMN1032UCB4-7
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
DMN1032UCB4-7
BESCHREIBUNG
MOSFET N-CH 12V 4.8A U-WLB1010-4
DETAILIERTE BESCHREIBUNG
N-Channel 12 V 4.8A (Ta) 900mW (Ta) Surface Mount U-WLB1010-4
HERSTELLER
Diodes Incorporated
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Diodes Incorporated
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
12 V
Current - Continuous Drain (Id) @ 25°C
4.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
26mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
4.5 nC @ 4.5 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
450 pF @ 6 V
FET Feature
-
Power Dissipation (Max)
900mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
U-WLB1010-4
Package / Case
4-UFBGA, WLBGA
Base Product Number
DMN1032
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
DMN1032UCB4-7DIDKR
DMN1032UCB4-7DICT
DMN1032UCB4-7DITR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Diodes Incorporated DMN1032UCB4-7
Dokumente und Medien
Environmental Information
1(Diodes Environmental Compliance Cert)
PCN Obsolescence/ EOL
1(Mult Dev EOL 22/Nov/2021)
PCN Assembly/Origin
1(Mult Dev Wafer Chgs 3/Feb/2021)
HTML Datasheet
1(DMN1032UCB4)
Menge Preis
-
Stellvertreter
Teil Nr. : PMCM6501VNEZ
Hersteller. : Nexperia USA Inc.
Verfügbare Menge. : 65
Einzelpreis. : $0.57000
Ersatztyp. : Similar
Verfügbare Menge. : 65
Einzelpreis. : $0.57000
Ersatztyp. : Similar