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ChinaNX3008PBKMB,315
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TEILNUMMER DES HERSTELLERS
NX3008PBKMB,315
BESCHREIBUNG
MOSFET P-CH 30V 300MA DFN1006B-3
DETAILIERTE BESCHREIBUNG
P-Channel 30 V 300mA (Ta) 360mW (Ta), 2.7W (Tc) Surface Mount DFN1006B-3
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
10,193
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
TrenchMOS™
Package
Bulk
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
300mA (Ta)
Rds On (Max) @ Id, Vgs
4.1Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id
1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.72 nC @ 4.5 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
46 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
360mW (Ta), 2.7W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DFN1006B-3
Package / Case
SC-101, SOT-883
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-NX3008PBKMB315
NEXNEXNX3008PBKMB,315
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. NX3008PBKMB,315
Dokumente und Medien
Datasheets
1(NX3008PBKMB,315)
Menge Preis
QUANTITÄT: 10193
Einzelpreis: $0.03
Verpackung: Bulk
MinMultiplikator: 10193
Verpackung: Bulk
MinMultiplikator: 10193
Stellvertreter
-