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ChinaSTB43N60DM2
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
STB43N60DM2
BESCHREIBUNG
MOSFET N-CH 600V 34A D2PAK
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 34A (Tc) 250W (Tc) Surface Mount TO-263 (D2PAK)
HERSTELLER
STMicroelectronics
STANDARD LEADTIME
26 Weeks
EDACAD-MODELL
STB43N60DM2 Models
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
STMicroelectronics
Series
MDmesh™ DM2
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
34A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
93mOhm @ 17A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
56 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
2500 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
250W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
STB43
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics STB43N60DM2
Dokumente und Medien
Datasheets
1(STB43N60DM2 Datasheet)
PCN Assembly/Origin
1(Wafer 15/Feb/2019)
PCN Packaging
1(Mult Dev Inner Box Chg 9/Dec/2021)
HTML Datasheet
1(STB43N60DM2 Datasheet)
EDA Models
1(STB43N60DM2 Models)
Menge Preis
QUANTITÄT: 2000
Einzelpreis: $3.03172
Verpackung: Tape & Reel (TR)
MinMultiplikator: 1000
Verpackung: Tape & Reel (TR)
MinMultiplikator: 1000
QUANTITÄT: 1000
Einzelpreis: $3.21973
Verpackung: Tape & Reel (TR)
MinMultiplikator: 1000
Verpackung: Tape & Reel (TR)
MinMultiplikator: 1000
Stellvertreter
-