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TEILNUMMER DES HERSTELLERS
64-9144
BESCHREIBUNG
MOSFET N-CH 30V 14A DIRECTFET
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 14A (Ta), 55A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount DIRECTFET™ ST
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
4,800
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
14A (Ta), 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
8.1mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.35V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.1W (Ta), 42W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DIRECTFET™ ST
Package / Case
DirectFET™ Isometric ST
Base Product Number
IRF6617
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
*IRF6617
64-9144TR
IRF6617-ND
SP001523336
IRF6617CT
IRF6617
IRF6617TR-ND
64-9144CT
IRF6617TR
IRF6617CT-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies 64-9144
Dokumente und Medien
Datasheets
1(IRF6617)
Other Related Documents
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Product Training Modules
1(Discrete Power MOSFETs 40V and Below)
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HTML Datasheet
1(IRF6617)
Product Drawings
1(IR Hexfet Circuit)
Menge Preis
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Stellvertreter
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