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ChinaNTMD2C02R2G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
NTMD2C02R2G
BESCHREIBUNG
MOSFET N/P-CH 20V 5.2A 8SOIC
DETAILIERTE BESCHREIBUNG
Mosfet Array 20V 5.2A, 3.4A 2W Surface Mount 8-SOIC
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
NTMD2C02R2G Models
STANDARDPAKET
2,500
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
5.2A, 3.4A
Rds On (Max) @ Id, Vgs
43mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
1100pF @ 10V
Power - Max
2W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC
Base Product Number
NTMD2C
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-NTMD2C02R2G-ONTR
ONSONSNTMD2C02R2G
NTMD2C02R2GOS
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/onsemi NTMD2C02R2G
Dokumente und Medien
Datasheets
1(NTMD2C02R2)
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Devices 13/Apr/2009)
PCN Design/Specification
1(Multiple Devices Copper Wire 20/Aug/2008)
HTML Datasheet
1(NTMD2C02R2)
EDA Models
1(NTMD2C02R2G Models)
Menge Preis
-
Stellvertreter
-