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ChinaRN49A1FE(TE85L,F)
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
RN49A1FE(TE85L,F)
BESCHREIBUNG
PNP + NPN BRT Q1BSR=2.2KOHM Q1BE
DETAILIERTE BESCHREIBUNG
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 200MHz, 250MHz 100mW Surface Mount ES6
HERSTELLER
Toshiba Semiconductor and Storage
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
4,000
Lagerbestände
Technische Daten
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
2.2kOhms, 22kOhms
Resistor - Emitter Base (R2)
47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
200MHz, 250MHz
Power - Max
100mW
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Supplier Device Package
ES6
Base Product Number
RN49A1
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075
Andere Namen
264-RN49A1FE(TE85LF)TR
264-RN49A1FE(TE85LF)CT
264-RN49A1FE(TE85LF)DKR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased/Toshiba Semiconductor and Storage RN49A1FE(TE85L,F)
Dokumente und Medien
PCN Obsolescence/ EOL
1(Mult Dev EOL Rev Apr/2021)
Menge Preis
-
Stellvertreter
Teil Nr. : PEMD10,115
Hersteller. : Nexperia USA Inc.
Verfügbare Menge. : 3,885
Einzelpreis. : $0.46000
Ersatztyp. : Similar
Verfügbare Menge. : 3,885
Einzelpreis. : $0.46000
Ersatztyp. : Similar