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ChinaNTMFD4C20NT1G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
NTMFD4C20NT1G
BESCHREIBUNG
MOSFET 2N-CH 30V 9.1A/13.7A 8DFN
DETAILIERTE BESCHREIBUNG
Mosfet Array 30V 9.1A, 13.7A 1.09W, 1.15W Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,500
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
9.1A, 13.7A
Rds On (Max) @ Id, Vgs
7.3mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
9.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
970pF @ 15V
Power - Max
1.09W, 1.15W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Supplier Device Package
8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
Base Product Number
NTMFD4
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
NTMFD4C20NT1GOSDKR
ONSONSNTMFD4C20NT1G
NTMFD4C20NT1G-ND
NTMFD4C20NT1GOSCT
NTMFD4C20NT1GOSTR
2156-NTMFD4C20NT1G-OS
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/onsemi NTMFD4C20NT1G
Dokumente und Medien
Datasheets
1(NTMFD4C20N)
Environmental Information
()
PCN Obsolescence/ EOL
1(Obsolete Notice 15/Dec/2022)
PCN Assembly/Origin
1(Wafer Fab Change 17/Oct/2022)
HTML Datasheet
1(NTMFD4C20N)
Menge Preis
QUANTITÄT: 1
Einzelpreis: $2.09
Verpackung: Cut Tape (CT)
MinMultiplikator: 1
Verpackung: Cut Tape (CT)
MinMultiplikator: 1
Stellvertreter
Teil Nr. : BSC0921NDIATMA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 18,776
Einzelpreis. : $1.68000
Ersatztyp. : Similar
Verfügbare Menge. : 18,776
Einzelpreis. : $1.68000
Ersatztyp. : Similar