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ChinaA2T21H360-23NR6
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
A2T21H360-23NR6
BESCHREIBUNG
RF MOSFET LDMOS 28V OM1230-42
DETAILIERTE BESCHREIBUNG
RF Mosfet 28 V 500 mA 2.11GHz ~ 2.2GHz 16.8dB 373W OM-1230-4L2L
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
150
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Technology
LDMOS
Configuration
Dual
Frequency
2.11GHz ~ 2.2GHz
Gain
16.8dB
Voltage - Test
28 V
Current Rating (Amps)
10µA
Noise Figure
-
Current - Test
500 mA
Power - Output
373W
Voltage - Rated
65 V
Package / Case
OM-1230-4L2L
Supplier Device Package
OM-1230-4L2L
Base Product Number
A2T21
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0075
Andere Namen
2832-A2T21H360-23NR6
935322358528
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/RF FETs, MOSFETs/NXP USA Inc. A2T21H360-23NR6
Dokumente und Medien
Datasheets
1(A2T21H360-23NR6)
Environmental Information
()
PCN Packaging
()
HTML Datasheet
1(A2T21H360-23NR6)
Menge Preis
-
Stellvertreter
-