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Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
PMN27XPE115
BESCHREIBUNG
SMALL SIGNAL FET
DETAILIERTE BESCHREIBUNG
P-Channel 20 V 4.4A (Ta) 530mW (Ta), 8.33W (Tc) Surface Mount 6-TSOP
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,332
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
-
Package
Bulk
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
4.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
30mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id
1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
22.5 nC @ 4.5 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
1770 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
530mW (Ta), 8.33W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
6-TSOP
Package / Case
SC-74, SOT-457
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
2156-PMN27XPE115
NEXNXPPMN27XPE115
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. PMN27XPE115
Dokumente und Medien
Datasheets
1(PMN27XPE)
HTML Datasheet
1(PMN27XPE)
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