Mfr
Infineon Technologies
Series
FASTIRFET™, HEXFET®
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
20A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
4.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.1V @ 25µA
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1011 pF @ 13 V
Power Dissipation (Max)
2.8W (Ta), 28W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-TQFN Exposed Pad