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ChinaDMN100-7-F
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
DMN100-7-F
BESCHREIBUNG
MOSFET N-CH 30V 1.1A SC59-3
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 1.1A (Ta) 500mW (Ta) Surface Mount SC-59-3
HERSTELLER
Diodes Incorporated
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Diodes Incorporated
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
240mOhm @ 1A, 10V
Vgs(th) (Max) @ Id
3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
5.5 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
150 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
500mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SC-59-3
Package / Case
TO-236-3, SC-59, SOT-23-3
Base Product Number
DMN100
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
DMN100-FDICT
DMN100-FDITR
DMN100-FDIDKR
DMN1007F
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Diodes Incorporated DMN100-7-F
Dokumente und Medien
Environmental Information
1(Diodes Environmental Compliance Cert)
PCN Obsolescence/ EOL
1(Mult Dev EOL 17/Feb/2022)
PCN Design/Specification
1(Bond Wire 3/May/2011)
PCN Assembly/Origin
1(Mult Dev A/T Site 31/Mar/2021)
PCN Other
1(Subs 2-17-2023)
HTML Datasheet
1(DMN100)
Product Drawings
1(SC-59 Package Top)
Menge Preis
-
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