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ChinaIRFD214PBF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRFD214PBF
BESCHREIBUNG
MOSFET N-CH 250V 450MA 4DIP
DETAILIERTE BESCHREIBUNG
N-Channel 250 V 450mA (Ta) 1W (Ta) Through Hole 4-HVMDIP
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
10 Weeks
EDACAD-MODELL
STANDARDPAKET
2,500
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25°C
450mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2Ohm @ 270mA, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8.2 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
140 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
4-HVMDIP
Package / Case
4-DIP (0.300", 7.62mm)
Base Product Number
IRFD214
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix IRFD214PBF
Dokumente und Medien
Datasheets
1(IRFD214, SiHFD214)
PCN Design/Specification
1(Mult Dev 01/Feb/2023)
HTML Datasheet
1(IRFD214, SiHFD214)
Product Drawings
()
Menge Preis
QUANTITÄT: 2500
Einzelpreis: $0.55146
Verpackung: Tube
MinMultiplikator: 2500
Verpackung: Tube
MinMultiplikator: 2500
Stellvertreter
-