Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
94-3412PBF
BESCHREIBUNG
MOSFET N-CH 30V 14A 8SO
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 14A (Ta) 3.1W (Ta) Surface Mount 8-SO
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
95

Technische Daten

Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
14A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V
Rds On (Max) @ Id, Vgs
12mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
33 nC @ 5 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
2335 pF @ 16 V
FET Feature
-
Power Dissipation (Max)
3.1W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SO
Package / Case
8-SOIC (0.154", 3.90mm Width)
Base Product Number
IRF7811

Umweltverträgliche Exportklassifikationen

Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

IRF7811WPBF
IRF7811WPBF-ND
SP001559302

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies 94-3412PBF

Dokumente und Medien

Datasheets
1(IRF7811WPbF)
Other Related Documents
1(Part Number Guide)
Product Training Modules
1(Discrete Power MOSFETs 40V and Below)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRF7811WPbF)

Menge Preis

-

Stellvertreter

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Verfügbare Menge. : 23,138
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Hersteller. : Diodes Incorporated
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Einzelpreis. : $0.53000
Ersatztyp. : Similar