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China2SA1309ARA
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TEILNUMMER DES HERSTELLERS
2SA1309ARA
BESCHREIBUNG
TRANS PNP 50V 0.1A NS-B1
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor PNP 50 V 100 mA 80MHz 300 mW Through Hole NS-B1
HERSTELLER
Panasonic Electronic Components
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
5,000
Lagerbestände
Technische Daten
Mfr
Panasonic Electronic Components
Series
-
Package
Tape & Box (TB)
Product Status
Obsolete
Transistor Type
PNP
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Vce Saturation (Max) @ Ib, Ic
300mV @ 5mA, 50mA
Current - Collector Cutoff (Max)
1µA
DC Current Gain (hFE) (Min) @ Ic, Vce
210 @ 2mA, 10V
Power - Max
300 mW
Frequency - Transition
80MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
3-SIP
Supplier Device Package
NS-B1
Base Product Number
2SA1309
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
2SA1309ARACT-NDR
2SA1309ARCT
2SA1309A-R(TA)
2SA1309ARTA
2SA1309ARTB
2SA1309ARCT-ND
2SA1309ARACT
2SA1309ARATB-NDR
2SA1309ARTB-ND
2SA1309ARATB
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Panasonic Electronic Components 2SA1309ARA
Dokumente und Medien
Datasheets
1(2SA1309AxA)
Featured Product
1(Wearables Technology Components)
Product Drawings
()
Menge Preis
-
Stellvertreter
-