English
Spain
Rusia
Italy
ChinaCY7C1312LV18-250BZXC
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
CY7C1312LV18-250BZXC
BESCHREIBUNG
IC SRAM 18MBIT PAR 165FBGA
DETAILIERTE BESCHREIBUNG
SRAM - Synchronous, QDR II Memory IC 18Mbit Parallel 250 MHz 165-FBGA (13x15)
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
-
Package
Tray
Product Status
Obsolete
allaboutcomponents.com Programmable
Not Verified
Memory Type
Volatile
Memory Format
SRAM
Technology
SRAM - Synchronous, QDR II
Memory Size
18Mbit
Memory Organization
1M x 18
Memory Interface
Parallel
Clock Frequency
250 MHz
Write Cycle Time - Word, Page
-
Voltage - Supply
1.7V ~ 1.9V
Operating Temperature
0°C ~ 70°C (TA)
Mounting Type
Surface Mount
Package / Case
165-LBGA
Supplier Device Package
165-FBGA (13x15)
Base Product Number
CY7C1312
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
3A991B2A
HTSUS
8542.32.0041
Andere Namen
-
Kategorie
/Product Index/Integrated Circuits (ICs)/Memory/Memory/Infineon Technologies CY7C1312LV18-250BZXC
Dokumente und Medien
Environmental Information
1(RoHS Certificate)
PCN Obsolescence/ EOL
()
PCN Design/Specification
1(Mult Device Serial No Mark 26/Sep/2017)
PCN Assembly/Origin
1(Assembly Site Add 08/Oct/2015)
PCN Packaging
()
PCN Other
1(Multiple Updates 27/Mar/2015)
Menge Preis
-
Stellvertreter
-