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ChinaFCH76N60NF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FCH76N60NF
BESCHREIBUNG
POWER FIELD-EFFECT TRANSISTOR, 7
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 72.8A (Tc) 543W (Tc) Through Hole TO-247
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
24
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
SupreMOS™
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
72.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
38mOhm @ 38A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
300 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
11045 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
543W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247
Package / Case
TO-247-3
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
ONSFSCFCH76N60NF
2156-FCH76N60NF
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FCH76N60NF
Dokumente und Medien
Datasheets
1(FCH76N60NF Datasheet)
Menge Preis
QUANTITÄT: 24
Einzelpreis: $12.89
Verpackung: Bulk
MinMultiplikator: 24
Verpackung: Bulk
MinMultiplikator: 24
Stellvertreter
-