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ChinaPHT2NQ10T,135
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
PHT2NQ10T,135
BESCHREIBUNG
MOSFET N-CH 100V 2.5A SOT223
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 2.5A (Tc) 6.25W (Tc) Surface Mount SC-73
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
4,000
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
TrenchMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
430mOhm @ 1.75A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
5.1 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
160 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
6.25W (Tc)
Operating Temperature
-65°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SC-73
Package / Case
TO-261-4, TO-261AA
Base Product Number
PHT2
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
PHT2NQ10T /T3
PHT2NQ10T /T3-ND
934056839135
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. PHT2NQ10T,135
Dokumente und Medien
Datasheets
1(PHT2NQ10T)
Environmental Information
()
PCN Packaging
1(All Dev Label Update 15/Dec/2020)
HTML Datasheet
1(PHT2NQ10T)
Menge Preis
-
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