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ChinaRJK03M9DNS-00#J5
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
RJK03M9DNS-00#J5
BESCHREIBUNG
MOSFET N-CH 30V 14A 8HWSON
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 14A (Ta) 10W (Tc) Surface Mount 8-HWSON (3.3x3.3)
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
738
Lagerbestände
Technische Daten
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
14A (Ta)
Rds On (Max) @ Id, Vgs
11.1mOhm @ 7A, 10V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
980 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
10W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-HWSON (3.3x3.3)
Package / Case
8-PowerWDFN
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
RENRNSRJK03M9DNS-00#J5
2156-RJK03M9DNS-00#J5-RETR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Renesas Electronics Corporation RJK03M9DNS-00#J5
Dokumente und Medien
Datasheets
1(RJK03M9DNS-00#J5)
Menge Preis
QUANTITÄT: 738
Einzelpreis: $0.41
Verpackung: Bulk
MinMultiplikator: 738
Verpackung: Bulk
MinMultiplikator: 738
Stellvertreter
-