Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
STP33N60M2
BESCHREIBUNG
MOSFET N-CH 600V 26A TO220
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 26A (Tc) 190W (Tc) Through Hole TO-220
HERSTELLER
STMicroelectronics
STANDARD LEADTIME
16 Weeks
EDACAD-MODELL
STP33N60M2 Models
STANDARDPAKET
50

Technische Daten

Mfr
STMicroelectronics
Series
MDmesh™ II Plus
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
125mOhm @ 13A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
45.5 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
1781 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
190W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
Base Product Number
STP33

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

497-14221-5
STP33N60M2-ND

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics STP33N60M2

Dokumente und Medien

Datasheets
1(STx33N60M2)
Featured Product
1(MDmesh II Plus™ Low Qg Power MOSFETs)
PCN Design/Specification
1(STx33N60M2 Datasheet Chg 31/May/2019)
HTML Datasheet
1(STx33N60M2)
EDA Models
1(STP33N60M2 Models)

Menge Preis

QUANTITÄT: 2000
Einzelpreis: $2.28594
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 1000
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Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 500
Einzelpreis: $2.83528
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 100
Einzelpreis: $3.1897
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 50
Einzelpreis: $3.7212
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $4.7
Verpackung: Tube
MinMultiplikator: 1

Stellvertreter

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