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ChinaIXTU01N100
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IXTU01N100
BESCHREIBUNG
MOSFET N-CH 1000V 100MA TO251
DETAILIERTE BESCHREIBUNG
N-Channel 1000 V 100mA (Tc) 25W (Tc) Through Hole TO-251AA
HERSTELLER
IXYS
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
70
Lagerbestände
Technische Daten
Mfr
IXYS
Series
-
Package
Tube
Product Status
Last Time Buy
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1000 V
Current - Continuous Drain (Id) @ 25°C
100mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
80Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id
4.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs
6.9 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
54 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
25W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-251AA
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number
IXTU01
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Andere Namen
IXTU01N100-NDR
Q1225942
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXTU01N100
Dokumente und Medien
Datasheets
1(IXT(U,Y)01N100)
Environmental Information
1(Ixys IC REACH)
PCN Obsolescence/ EOL
1(Mult DEV EOL/OBS 08/Nov/2023)
HTML Datasheet
1(IXT(U,Y)01N100)
Menge Preis
QUANTITÄT: 70
Einzelpreis: $2.33686
Verpackung: Tube
MinMultiplikator: 70
Verpackung: Tube
MinMultiplikator: 70
Stellvertreter
-