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TEILNUMMER DES HERSTELLERS
CDBGBSC20650-G
BESCHREIBUNG
DIODE ARR SIC SCHOT 650V TO247
DETAILIERTE BESCHREIBUNG
Diode Array 1 Pair Common Cathode 650 V 33A (DC) Through Hole TO-247-3
HERSTELLER
Comchip Technology
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Comchip Technology
Series
-
Package
Tube
Product Status
Obsolete
Diode Configuration
1 Pair Common Cathode
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io) (per Diode)
33A (DC)
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 10 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
100 µA @ 650 V
Operating Temperature - Junction
-55°C ~ 175°C
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247
Base Product Number
CDBGBSC20650
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.10.0080
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Diodes/Rectifiers/Diode Arrays/Comchip Technology CDBGBSC20650-G
Dokumente und Medien
Datasheets
1(CDBGBSC20650-G)
Environmental Information
1(Comchip Technology RoHS Cert)
Featured Product
1(SiC Schottky Barrier Diodes)
PCN Obsolescence/ EOL
1(Mult Dev EOL 21/Oct/2022)
PCN Design/Specification
1(CDBx 23-May-2022)
HTML Datasheet
1(CDBGBSC20650-G)
Menge Preis
-
Stellvertreter
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