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ChinaFDD6778A
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FDD6778A
BESCHREIBUNG
MOSFET N-CH 25V 12A/10A DPAK
DETAILIERTE BESCHREIBUNG
N-Channel 25 V 12A (Ta), 10A (Tc) 3.7W (Ta), 24W (Tc) Surface Mount TO-252AA
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
2,500
Lagerbestände
Technische Daten
Mfr
onsemi
Series
PowerTrench®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
12A (Ta), 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
14mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
870 pF @ 13 V
FET Feature
-
Power Dissipation (Max)
3.7W (Ta), 24W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252AA
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number
FDD677
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
FDD6778ACT
FDD6778ATR
FDD6778ADKR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FDD6778A
Dokumente und Medien
Video File
1(Brushless DC Motor Control | Datasheet Preview)
Environmental Information
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Featured Product
1(ON Semiconductor - 30 V to 60 V Trench6 N-Channel MOSFET)
Menge Preis
-
Stellvertreter
Teil Nr. : IPD135N03LGATMA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 6,806
Einzelpreis. : $0.84000
Ersatztyp. : Similar
Verfügbare Menge. : 6,806
Einzelpreis. : $0.84000
Ersatztyp. : Similar