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ChinaSGH10N60RUFDTU
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TEILNUMMER DES HERSTELLERS
SGH10N60RUFDTU
BESCHREIBUNG
IGBT 600V 16A 75W TO3P
DETAILIERTE BESCHREIBUNG
IGBT 600 V 16 A 75 W Through Hole TO-3PN
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
SGH10N60RUFDTU Models
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Tube
Product Status
Obsolete
IGBT Type
-
Voltage - Collector Emitter Breakdown (Max)
600 V
Current - Collector (Ic) (Max)
16 A
Current - Collector Pulsed (Icm)
30 A
Vce(on) (Max) @ Vge, Ic
2.8V @ 15V, 10A
Power - Max
75 W
Switching Energy
141µJ (on), 215µJ (off)
Input Type
Standard
Gate Charge
30 nC
Td (on/off) @ 25°C
15ns/36ns
Test Condition
300V, 10A, 20Ohm, 15V
Reverse Recovery Time (trr)
60 ns
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Supplier Device Package
TO-3PN
Base Product Number
SGH10N60
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
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Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/Single IGBTs/onsemi SGH10N60RUFDTU
Dokumente und Medien
Datasheets
1(SGH10N60RUFD)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 30/Sep/2022)
PCN Design/Specification
()
PCN Assembly/Origin
1(Mold compound change 17/Sep/2019)
PCN Packaging
()
HTML Datasheet
1(SGH10N60RUFD)
EDA Models
1(SGH10N60RUFDTU Models)
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