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ChinaEMG2DXV5T5G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
EMG2DXV5T5G
BESCHREIBUNG
TRANS PREBIAS 2NPN 50V SOT553
DETAILIERTE BESCHREIBUNG
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 230mW Surface Mount SOT-553
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
EMG2DXV5T5G Models
STANDARDPAKET
8,000
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
47kOhms
Resistor - Emitter Base (R2)
47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
-
Power - Max
230mW
Mounting Type
Surface Mount
Package / Case
SOT-553
Supplier Device Package
SOT-553
Base Product Number
EMG2DXV5
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
2156-EMG2DXV5T5G-OS
EMG2DXV5T5GOSCT
EMG2DXV5T5GOSTR
EMG2DXV5T5GOSDKR
EMG2DXV5T5G-ND
ONSONSEMG2DXV5T5G
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased/onsemi EMG2DXV5T5G
Dokumente und Medien
Datasheets
1(EMG(2,5)DXV5T1)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 30/Jun/2022)
PCN Design/Specification
1(Wire Bond 01/Dec/2010)
PCN Assembly/Origin
1(Mult Dev 24/Apr/2020)
PCN Packaging
1(Carrier Tape 15/Aug/2017)
HTML Datasheet
1(EMG(2,5)DXV5T1)
EDA Models
1(EMG2DXV5T5G Models)
Menge Preis
-
Stellvertreter
-