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ChinaHUF76407D3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
HUF76407D3
BESCHREIBUNG
MOSFET N-CH 60V 12A IPAK
DETAILIERTE BESCHREIBUNG
N-Channel 60 V 12A (Tc) 38W (Tc) Through Hole I-PAK
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
onsemi
Series
UltraFET™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
92mOhm @ 13A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
11.3 nC @ 10 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
350 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
38W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I-PAK
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number
HUF76
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi HUF76407D3
Dokumente und Medien
Datasheets
1(HUF76407D3, HUF76407D3S)
Environmental Information
1(onsemi RoHS)
Menge Preis
-
Stellvertreter
Teil Nr. : STD12NF06L-1
Hersteller. : STMicroelectronics
Verfügbare Menge. : 1,924
Einzelpreis. : $0.82000
Ersatztyp. : Similar
Verfügbare Menge. : 1,924
Einzelpreis. : $0.82000
Ersatztyp. : Similar