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ChinaIRFI624BTUFP001
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRFI624BTUFP001
BESCHREIBUNG
N-CHANNEL POWER MOSFET
DETAILIERTE BESCHREIBUNG
N-Channel 250 V 4.1A (Tc) 3.13W (Ta), 49W (Tc) Through Hole TO-262 (I2PAK)
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
2,000
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25°C
4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.1Ohm @ 2.05A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
450 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.13W (Ta), 49W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262 (I2PAK)
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
FAIFSCIRFI624BTUFP001
2156-IRFI624BTUFP001
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor IRFI624BTUFP001
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 2000
Einzelpreis: $0.15
Verpackung: Bulk
MinMultiplikator: 2000
Verpackung: Bulk
MinMultiplikator: 2000
Stellvertreter
-