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ChinaBS170-D26Z
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BS170-D26Z
BESCHREIBUNG
SMALL SIGNAL FIELD-EFFECT TRANSI
DETAILIERTE BESCHREIBUNG
N-Channel 60 V 500mA (Ta) 830mW (Ta) Through Hole TO-92-3
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,143
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id
3V @ 1mA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
40 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
830mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-92-3
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
ONSFSCBS170-D26Z
2156-BS170-D26Z
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor BS170-D26Z
Dokumente und Medien
Datasheets
1(BS170 Datasheet)
Menge Preis
QUANTITÄT: 3143
Einzelpreis: $0.1
Verpackung: Bulk
MinMultiplikator: 3143
Verpackung: Bulk
MinMultiplikator: 3143
Stellvertreter
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