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ChinaFF11MR12W1M1B11BOMA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FF11MR12W1M1B11BOMA1
BESCHREIBUNG
MOSFET 2N-CH 1200V 100A MODULE
DETAILIERTE BESCHREIBUNG
Mosfet Array 1200V (1.2kV) 100A Chassis Mount Module
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
24
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
CoolSiC™+
Package
Tray
Product Status
Obsolete
Technology
Silicon Carbide (SiC)
Configuration
2 N-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
100A
Rds On (Max) @ Id, Vgs
11mOhm @ 100A, 15V
Vgs(th) (Max) @ Id
5.55V @ 40mA
Gate Charge (Qg) (Max) @ Vgs
250nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds
7950pF @ 800V
Power - Max
-
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
Module
Base Product Number
FF11MR12
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-FF11MR12W1M1B11BOMA1
INFINFFF11MR12W1M1B11BOMA1
FF11MR12W1M1_B11
SP001602204
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Infineon Technologies FF11MR12W1M1B11BOMA1
Dokumente und Medien
Datasheets
1(FF11MR12W1M1_B11)
Featured Product
1(Industrial Drives)
PCN Obsolescence/ EOL
1(Mult Dev LDD Rev 23/Dec/2022)
HTML Datasheet
1(FF11MR12W1M1_B11)
Menge Preis
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Stellvertreter
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