Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
NTMS10P02R2
BESCHREIBUNG
MOSFET P-CH 20V 8.8A 8SOIC
DETAILIERTE BESCHREIBUNG
P-Channel 20 V 8.8A (Ta) 1.6W (Ta) Surface Mount 8-SOIC
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
NTMS10P02R2 Models
STANDARDPAKET
2,500

Technische Daten

Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
8.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
14mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
70 nC @ 4.5 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
3640 pF @ 16 V
FET Feature
-
Power Dissipation (Max)
1.6W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)
Base Product Number
NTMS10

Umweltverträgliche Exportklassifikationen

RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

2156-NTMS10P02R2
2156-NTMS10P02R2-ONTR-ND
NTMS10P02R2OSTR
ONSONSNTMS10P02R2

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NTMS10P02R2

Dokumente und Medien

Datasheets
1(NTMS10P02R2)
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Devices 11/Feb/2009)
PCN Design/Specification
1(Multiple Devices Copper Wire 20/Aug/2008)
HTML Datasheet
1(NTMS10P02R2)
EDA Models
1(NTMS10P02R2 Models)

Menge Preis

-

Stellvertreter

Teil Nr. : NTMS10P02R2G
Hersteller. : onsemi
Verfügbare Menge. : 2,644
Einzelpreis. : $1.60000
Ersatztyp. : Direct
Teil Nr. : DMP2022LSS-13
Hersteller. : Diodes Incorporated
Verfügbare Menge. : 37,712
Einzelpreis. : $0.72000
Ersatztyp. : Similar