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ChinaNTB13N10T4G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
NTB13N10T4G
BESCHREIBUNG
MOSFET N-CH 100V 13A D2PAK
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 13A (Ta) 64.7W (Ta) Surface Mount D2PAK
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
NTB13N10T4G Models
STANDARDPAKET
800
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
13A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
165mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
550 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
64.7W (Ta)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D2PAK
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
NTB13
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NTB13N10T4G
Dokumente und Medien
Datasheets
1(NTB13N10)
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Devices 13/Apr/2009)
HTML Datasheet
1(NTB13N10)
EDA Models
1(NTB13N10T4G Models)
Menge Preis
-
Stellvertreter
-