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ChinaFCPF9N60NTYDTU
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FCPF9N60NTYDTU
BESCHREIBUNG
MOSFET N-CH 600V 9A TO220F-3
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 9A (Tc) 29.8W (Tc) Through Hole TO-220F-3 (Y-Forming)
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
FCPF9N60NTYDTU Models
STANDARDPAKET
800
Lagerbestände
Technische Daten
Mfr
onsemi
Series
SupreMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
385mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
29 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1240 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
29.8W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220F-3 (Y-Forming)
Package / Case
TO-220-3 Full Pack, Formed Leads
Base Product Number
FCPF9N60
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2832-FCPF9N60NTYDTU
2832-FCPF9N60NTYDTU-488
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FCPF9N60NTYDTU
Dokumente und Medien
Datasheets
1(FCPF9N60N, FCPF9N60T)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 29/Mar/2022)
PCN Design/Specification
1(Logo 17/Aug/2017)
PCN Assembly/Origin
1(Mold Compound Change 25/Sep/2019)
PCN Packaging
1(Mult Devices 24/Oct/2017)
EDA Models
1(FCPF9N60NTYDTU Models)
Menge Preis
-
Stellvertreter
Teil Nr. : FCPF9N60NTYDTU
Hersteller. : Flip Electronics
Verfügbare Menge. : 2,400
Einzelpreis. : $1.24000
Ersatztyp. : Parametric Equivalent
Verfügbare Menge. : 2,400
Einzelpreis. : $1.24000
Ersatztyp. : Parametric Equivalent