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ChinaH7N1002LS-E
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
H7N1002LS-E
BESCHREIBUNG
MOSFET N-CH 100V 75A 4LDPAK
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 75A (Ta) 100W (Tc) Surface Mount LDPAK
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Renesas Electronics Corporation
Series
-
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
75A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
10mOhm @ 37.5A, 10V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
155 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
9700 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
100W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
LDPAK
Package / Case
SC-83
Base Product Number
H7N1002
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Renesas Electronics Corporation H7N1002LS-E
Dokumente und Medien
Datasheets
1(H7N1002LD,LS,LM)
PCN Packaging
1(Label Change-All Devices 01/Dec/2022)
Menge Preis
-
Stellvertreter
Teil Nr. : PSMN015-100B,118
Hersteller. : Nexperia USA Inc.
Verfügbare Menge. : 2,021
Einzelpreis. : $2.03000
Ersatztyp. : Similar
Verfügbare Menge. : 2,021
Einzelpreis. : $2.03000
Ersatztyp. : Similar