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ChinaNAND512R3A2AZA6E
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TEILNUMMER DES HERSTELLERS
NAND512R3A2AZA6E
BESCHREIBUNG
IC FLASH 512MBIT PAR 55VFBGA
DETAILIERTE BESCHREIBUNG
FLASH - NAND Memory IC 512Mbit Parallel 60 ns 55-VFBGA (8x10)
HERSTELLER
STMicroelectronics
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
960
Lagerbestände
Technische Daten
Mfr
STMicroelectronics
Series
-
Package
Tray
Product Status
Obsolete
allaboutcomponents.com Programmable
Not Verified
Memory Type
Non-Volatile
Memory Format
FLASH
Technology
FLASH - NAND
Memory Size
512Mbit
Memory Organization
64M x 8
Memory Interface
Parallel
Write Cycle Time - Word, Page
60ns
Access Time
60 ns
Voltage - Supply
1.7V ~ 1.95V
Operating Temperature
-40°C ~ 85°C (TA)
Mounting Type
Surface Mount
Package / Case
55-TFBGA
Supplier Device Package
55-VFBGA (8x10)
Base Product Number
NAND512
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
3A991B1A
HTSUS
8542.32.0071
Andere Namen
-
Kategorie
/Product Index/Integrated Circuits (ICs)/Memory/Memory/STMicroelectronics NAND512R3A2AZA6E
Dokumente und Medien
Datasheets
1(NAND128/256/512/01G-A (V7.0))
Featured Product
1(Serial EEPROMs)
HTML Datasheet
1(NAND128/256/512/01G-A (V7.0))
Menge Preis
-
Stellvertreter
-