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ChinaSTU13N65M2
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
STU13N65M2
BESCHREIBUNG
MOSFET N-CH 650V 10A IPAK
DETAILIERTE BESCHREIBUNG
N-Channel 650 V 10A (Tc) 110W (Tc) Through Hole TO-251 (IPAK)
HERSTELLER
STMicroelectronics
STANDARD LEADTIME
EDACAD-MODELL
STU13N65M2 Models
STANDARDPAKET
75
Lagerbestände
Technische Daten
Mfr
STMicroelectronics
Series
MDmesh™ M2
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
430mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
590 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
110W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-251 (IPAK)
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number
STU13N
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics STU13N65M2
Dokumente und Medien
Datasheets
1(ST(P,U)13N65M2)
Product Training Modules
1(STMicroelectronics ST MOSFETs)
PCN Obsolescence/ EOL
1(Mult Dev OBS 3/Jul/2020)
PCN Assembly/Origin
1(Mult Dev Wafer Site Add 3/Aug/2018)
HTML Datasheet
1(ST(P,U)13N65M2)
EDA Models
1(STU13N65M2 Models)
Menge Preis
-
Stellvertreter
Teil Nr. : IPSA70R450P7SAKMA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 1,500
Einzelpreis. : $0.90000
Ersatztyp. : Similar
Verfügbare Menge. : 1,500
Einzelpreis. : $0.90000
Ersatztyp. : Similar
Teil Nr. : SIHU7N60E-E3
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 0
Einzelpreis. : $0.89464
Ersatztyp. : Similar
Verfügbare Menge. : 0
Einzelpreis. : $0.89464
Ersatztyp. : Similar