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ChinaIXTP2N60P
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IXTP2N60P
BESCHREIBUNG
MOSFET N-CH 600V 2A TO220AB
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 2A (Tc) 55W (Tc) Through Hole TO-220-3
HERSTELLER
IXYS
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
IXYS
Series
Polar™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
5.1Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
7 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
240 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
55W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Base Product Number
IXTP2
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXTP2N60P
Dokumente und Medien
Datasheets
()
PCN Obsolescence/ EOL
1(Mult DEV EOL/OBS 08/Nov/2023)
HTML Datasheet
1(IXT(P,Y)2N60P)
Menge Preis
-
Stellvertreter
Teil Nr. : IXTP2N65X2
Hersteller. : IXYS
Verfügbare Menge. : 67
Einzelpreis. : $2.75000
Ersatztyp. : Similar
Verfügbare Menge. : 67
Einzelpreis. : $2.75000
Ersatztyp. : Similar