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ChinaRM12N650T2
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
RM12N650T2
BESCHREIBUNG
MOSFET N-CH 650V 11.5A TO220-3
DETAILIERTE BESCHREIBUNG
N-Channel 650 V 11.5A (Tc) 101W (Tc) Through Hole TO-220-3
HERSTELLER
Rectron USA
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
2,000
Lagerbestände
Technische Daten
Mfr
Rectron USA
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
360mOhm @ 7A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
870 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
101W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
HTSUS
8541.10.0080
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Rectron USA RM12N650T2
Dokumente und Medien
Datasheets
1(RM12N650xx)
Menge Preis
QUANTITÄT: 2000
Einzelpreis: $1.45
Verpackung: Tube
MinMultiplikator: 2000
Verpackung: Tube
MinMultiplikator: 2000
Stellvertreter
-