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ChinaBUV27G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BUV27G
BESCHREIBUNG
TRANS NPN 120V 12A TO220
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 120 V 12 A 70 W Through Hole TO-220
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
BUV27G Models
STANDARDPAKET
50
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Tube
Product Status
Obsolete
Transistor Type
NPN
Current - Collector (Ic) (Max)
12 A
Voltage - Collector Emitter Breakdown (Max)
120 V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 800mA, 8A
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
-
Power - Max
70 W
Frequency - Transition
-
Operating Temperature
-65°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220
Base Product Number
BUV27
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi BUV27G
Dokumente und Medien
Datasheets
1(BUV27)
Environmental Information
1(onsemi RoHS)
PCN Obsolescence/ EOL
1(1Q2018 Product EOL 31/Mar/2018)
PCN Design/Specification
1(TO-220 Case Outline Update 18/Sep/2014)
PCN Assembly/Origin
1(Mult Devices 28/Aug/2017)
HTML Datasheet
1(BUV27)
EDA Models
1(BUV27G Models)
Menge Preis
-
Stellvertreter
-