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ChinaSQP120N06-3M5L_GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SQP120N06-3M5L_GE3
BESCHREIBUNG
MOSFET N-CH 60V 120A TO220AB
DETAILIERTE BESCHREIBUNG
N-Channel 60 V 120A (Tc) 250W (Tc) Through Hole TO-220AB
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
50
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
330 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
14700 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
250W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
SQP120
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SQP120N06-3M5L_GE3DKR-ND
SQP120N06-3M5L_GE3CT-ND
SQP120N06-3M5L_GE3TR-ND
SQP120N06-3M5L_GE3TR
SQP120N06-3M5L_GE3DKRINACTIVE
SQP120N06-3M5L_GE3DKR
SQP120N06-3M5L_GE3CT
SQP120N06-3M5L_GE3TRINACTIVE
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SQP120N06-3M5L_GE3
Dokumente und Medien
Datasheets
1(SQP120N06-3M5L)
PCN Obsolescence/ EOL
1(Mult Dev EOL 12/Nov/2021)
HTML Datasheet
1(SQP120N06-3M5L)
Menge Preis
-
Stellvertreter
Teil Nr. : DMT6004SCT
Hersteller. : Diodes Incorporated
Verfügbare Menge. : 47
Einzelpreis. : $1.91000
Ersatztyp. : Similar
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Einzelpreis. : $1.91000
Ersatztyp. : Similar
Teil Nr. : FDP032N08
Hersteller. : onsemi
Verfügbare Menge. : 924
Einzelpreis. : $5.79000
Ersatztyp. : Similar
Verfügbare Menge. : 924
Einzelpreis. : $5.79000
Ersatztyp. : Similar