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ChinaIPL60R255P6AUMA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IPL60R255P6AUMA1
BESCHREIBUNG
MOSFET N-CH 600V 15.9A 4VSON
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 15.9A (Tc) 126W (Tc) Surface Mount PG-VSON-4
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
CoolMOS™ P6
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
15.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
255mOhm @ 6.4A, 10V
Vgs(th) (Max) @ Id
4.5V @ 530µA
Gate Charge (Qg) (Max) @ Vgs
31 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1450 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
126W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-VSON-4
Package / Case
4-PowerTSFN
Base Product Number
IPL60R
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
2A (4 Weeks)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
IPL60R255P6AUMA1DKR
IPL60R255P6AUMA1TR
IPL60R255P6AUMA1CT
SP001017094
ROCINFIPL60R255P6AUMA1
2156-IPL60R255P6AUMA1-ITTR-ND
2156-IPL60R255P6AUMA1
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPL60R255P6AUMA1
Dokumente und Medien
Datasheets
1(IPL60R255P6)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPL60R255P6)
Simulation Models
1(CoolMOS™ Power MOSFET 600V P6 Spice Model)
Menge Preis
-
Stellvertreter
Teil Nr. : IPL60R180P6AUMA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 0
Einzelpreis. : $3.50000
Ersatztyp. : Direct
Verfügbare Menge. : 0
Einzelpreis. : $3.50000
Ersatztyp. : Direct